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february 2016 docid028799 rev 1 1 / 13 this is information on a product in full production. www.st.com STP30N10F7 n - channel 100 v, 0.02 typ., 32 a stripfet? f7 power mosfet in a to - 220 package datasheet - production data figure 1: internal schematic diagram features order code v ds r ds(on) max. i d p tot STP30N10F7 100 v 0.024 32 a 50 w ? among the lowest r ds(on) on the market ? excellent figure of merit (fom ) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n-channel power mosfet utilizes stripfet? f 7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. table 1: device summary order code marking package packing STP30N10F7 30n10f7 to - 220 tube am01475v1_t ab d(2, t ab) g(1) s(3)
contents STP30N10F7 2 / 13 docid028799 rev 1 contents 1 electrical ratings ............................................................................... 3 2 electrical characteristics ................................................................ . 4 2.1 electrical characteristics (curves) ...................................................... 5 3 test circuits ...................................................................................... 8 4 package information ........................................................................ 9 4.1 to -220 type a package information ................................................ 10 5 revision history .............................................................................. 12
STP30N10F7 electrical ratings docid028799 rev 1 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 100 v v gs gate source voltage 20 v i d drain current (continuous) at t c = 25 c 32 a i d drain current (continuous) at t c = 100 c 23 a i dm (1) drain current (pulsed) 132 a p tot total dissipation at t c = 25 c 50 w t j operating junction temperature range - 55 to 175 c t stg storage temperature range notes: (1) pulse width limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 3 c/w r thj - amb thermal resistance junction - ambient 62.5 c/w
electrical characteristics STP30N10F7 4 / 13 docid028799 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 250 a 100 v i dss zero gate voltage drain current v gs = 0 v, v ds =100 v 1 a v gs = 0 v, v ds =100 v,t c = 125 c 100 a i gss gate - body leakage current v ds = 0 v, v gs = +20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 16 a 0.02 0.024 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz,v gs = 0 v - 1270 - pf c oss output capacitance - 290 - pf c rss reverse transfer capacitance - 24 - pf q g total gate charge v dd = 50 v, i d = 32 a, v gs = 10 v (see figure 14: "test circuit for gate charge behavior" ) - 19 - nc q gs gate - source charge - 9 - nc q gd gate - drain charge - 4.5 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 50 v, i d =16 a, r g = 4.7 , v gs = 10 v (see figure 13: "test circuit for resistive load switching times" ) - 12 - ns t r rise time - 17.5 - ns t d(off) turn - off delay time - 22 - ns t f fall time - 5.6 - ns
STP30N10F7 electrical characteristics docid028799 rev 1 5 / 13 table 7: source-drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage i sd = 32 a, v gs = 0 v - 1.1 v t rr reverse recovery time i sd = 32 a, di/dt = 100 a/s v dd = 80 v, t j = 150 c, figure 15: "test circuit for inductive load switching and diode recovery times" - 41 ns q rr reverse recovery charge - 47 nc i rrm reverse recovery current - 2.3 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%. 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics i d 10 1 0.1 0.1 1 vds (v) 10 (a) 100s 1ms 10ms 0.01 tj=175c tc=25c single pulse 100 operation in this area is limited by r ds(on) d 0.05 0.02 0.01 0.1 0.2
electrical characteristics STP30N10F7 6 / 13 docid028799 rev 1 figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperat ure essaggio
STP30N10F7 electrical characteristics docid028799 rev 1 7 / 13 figure 12 : source - drain diode forward characteristics
test circuits STP30N10F7 8 / 13 docid028799 rev 1 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
STP30N10F7 package information docid028799 rev 1 9 / 13 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STP30N10F7 10 / 13 docid028799 rev 1 4.1 to -220 type a package information figure 19 : to-220 type a package outline
STP30N10F7 package information docid028799 rev 1 11 / 13 table 8: to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
revision history STP30N10F7 12 / 13 docid028799 rev 1 5 revision history table 9: document revision history date revision changes 01 - feb - 2016 1 first release.
STP30N10F7 do cid028799 rev 1 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the late st relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st pr oducts and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the in formation set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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